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TISP9110LDM Overvoltage Protector
Absolute Maximum Ratings, TA = 25 ° C (Unless Otherwise Noted)
Rating
Symbol
Value
Unit
Repetitive peak off-state voltage
V G1(Line) = 0, V G2 ≥ +5 V
V G2(Line) = 0, V G1 ≥ -5 V
V DRM
-120
+120
V
Non-repetitive peak impulse current (see Notes 1, 2, 3 and 4)
2/10 μ s (Telcordia GR-1089-CORE)
± 100
5/310 μ s (ITU-T K.20, K.21 & K.45, K.44 open-circuit voltage wave shape 10/700 μ s)
10/1000 μ s (Telcordia GR-1089-CORE)
I PPSM
± 45
± 30
A
Non-repetitive peak on-state current, 50 Hz / 60 Hz (see Notes 1, 2, 3 and 5)
0.2 s
9.0
1s
900 s
Maximum negative battery supply voltage
Maximum positive battery supply voltage
Maximum differential battery supply voltage
Junction temperature
Storage temperature range
I TSM
V G1M
V G2M
? V (BAT)M
T J
T stg
5.0
1.7
-110
+110
220
-40 to +150
-65 to +150
A
V
V
V
° C
° C
NOTES: 1. Initially the device must be in thermal equilibrium with T J = 25 ° C. The surge may be repeated after the device returns to its initial
conditions.
2. The rated current values may be applied to either of the Line to Ground terminal pairs. Additionally, both terminal pairs may have
their rated current values applied simultaneously (in this case the Ground terminal current will be twice the rated current value of a
single terminal pair).
3. Rated currents only apply if pins 6 & 7 (Ground) are connected together.
4. Applies for the following bias conditions: V G1 = -20 V to -110 V, V G2 = 0 V to +110 V.
5. EIA/JESD51-2 environment and EIA/JESD51-7 high effective thermal conductivity test board (multi-layer) connected with 0.6 mm
printed wiring track widths.
Electrical Characteristics for any Section, TA = 25 ° C (Unless Otherwise Noted)
Parameter
Test Conditions
Min
Typ
Max Unit
I D
I G1(Line)
I G2(Line)
V G1L(BO)
V G2L(BO)
I H -
I G1T
I G2T
C O
Off-state current
Negative-gate leakage current
Positive-gate leakage current
Gate - Line impulse breakover voltage
Gate - Line impulse breakover voltage
Negative holding current
Negative-gate trigger current
Positive-gate trigger current
Line - Ground off-state capacitance
V D = V DRM , V G1(Line) = 0, V G2 ≥ +5 V
V D = V DRM , V G2(Line) = 0, V G1 ≥ -5 V
V G1(Line) = -220 V
V G2(Line) = +220 V
V G1 = -100 V, I T = -100 A (see Note 6)
V G1 = -100 V, I T = -30 A
V G2 = +100 V, I T = +100 A (see Note 6)
V G2 = +100 V, I T = +30 A
V G1 = -60 V, I T = -1 A, di/dt = 1 A/ms
I T = -5 A, t p(g) ≥ 20 μ s, V G1 = -60 V
I T = 5 A, t p(g) ≥ 20 μ s, V G2 = 60 V
f = 1 MHz, V D = -3 V, G1 & G2 open circuit
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 85 ° C
2/10 μ s
10/1000 μ s
2/10 μ s
10/1000 μ s
-150
32
-5
-50
+5
+50
-5
+5
-15
-11
+15
+11
+5
-5
μ A
μ A
μ A
V
V
mA
mA
mA
pF
NOTE:
6. Voltage measurements should be made with an oscilloscope with limited bandwidth (20 MHz) to avoid high frequency noise.
AUGUST 2004 – REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
发布紧急采购，3分钟左右您将得到回复。
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